bt136x series general description glass passivated triacs in a full pack symbol parameter max. max. max. unit plastic envelope, intended for use in applications requiring high bt136x- 500 600 800 bidirectional transient and blocking bt136x- 500f 600f 800f voltage capability and high thermal bt136x- 500g 600g 800g cycling performance. typical drm repetitive peak off-state 500 600 800 v applications include motor control, industrial and domestic lighting, t(rms) rms on-state current 4 4 4 a heating and static switching. tsm non-repetitive peak on-state 25 25 25 a current sot186a limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 -800 v drm repetitive peak off-state - 500 1 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t hs 92 ?c - 4 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 25 a t = 16.7 ms - 27 a i 2 ti 2 t for fusing t = 10 ms - 3.1 a 2 s di t /dt repetitive rate of rise of i tm = 6 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ m s triggering t2+ g+ - 50 a/ m s t2+ g- - 50 a/ m s t2- g- - 50 a/ m s t2- g+ - 10 a/ m s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3 a/ m s. quick reference data symbol voltages v i i to-220f www.kersemi.com 2014-6-11 1
isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol r.m.s. isolation voltage from all f = 50-60 hz; sinusoidal - 2500 v three terminals to external waveform; heatsink r.h. 65% ; clean and dustfree c isol capacitance from t2 to external f = 1 mhz - 10 - pf heatsink thermal resistances symbol parameter conditions min. typ. max. unit r th j-hs thermal resistance full or half cycle junction to heatsink with heatsink compound - - 5.5 k/w without heatsink compound - - 7.2 k/w r th j-a thermal resistance in free air - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt136x- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 11 35 25 50 ma t2- g+ - 30 70 70 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 7 20 20 30 ma t2+ g- - 16 30 30 45 ma t2- g- - 5 20 20 30 ma t2- g+ - 7 30 30 45 ma i h holding current v d = 12 v; i gt = 0.1 a - 5 15 15 30 ma v t on-state voltage i t = 5 a - 1.4 1.70 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c bt136x series www.kersemi.com 2014-6-11 2 dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt136x- ... ...f ...g dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 100 50 200 250 - v/ m s off-state voltage t j = 125 ?c; exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; - - 10 50 - v/ m s commutating voltage i t(rms) = 4 a; di com /dt = 1.8 a/ms; gate open circuit t gt gate controlled turn-on i tm = 6 a; v d = v drm(max) ;- - - 2 - m s time i g = 0.1 a; di g /dt = 5 a/ m s
fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus heatsink temperature t hs . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t hs 92?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 012345 0 1 2 3 4 5 6 7 8 = 180 120 90 60 30 bt136 it(rms) / a ptot / w ths(max) / c 125 119.5 114 108.5 103 97.5 92 86.5 81 1 -50 0 50 100 150 0 1 2 3 4 5 bt136x 92 c ths / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 bt136 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 2 4 6 8 10 12 bt136 surge duration / s it(rms) / a 1 10 100 1000 0 5 10 15 20 25 30 bt136 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) bt136x series www.kersemi.com 2014-6-11 3
fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-hs , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt136 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 bt136 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.27 v rs = 0.091 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt136 tp / s zth j-hs (k/w) t p p t d unidirectional with heatsink compound without heatsink compound bidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 1.8 3 tj / c dicom/dt = 5.1 3.9 2.3 dvcom/dt (v/us) a/ms 1.4 off-state dv/dt limit bt136...g series bt136 series bt136...f series bt136x series www.kersemi.com 2014-6-11 4
mechanical data dimensions in mm net mass: 2 g fig.13. sot186a; the seating plane is electrically isolated from all terminals. notes 1. refer to mounting instructions for f-pack envelopes. 2. epoxy meets ul94 v0 at 1/8". 10.3 max 3.2 3.0 4.6 max 2.9 max 2.8 seating plane 6.4 15.8 max 0.6 2.5 2.54 5.08 12 3 3 max. not tinned 3 0.5 2.5 0.9 0.7 m 0.4 15.8 max. 19 max. 13.5 min. recesses (2x) 2.5 0.8 max. depth 1.0 (2x) 1.3 bt136x series www.kersemi.com 2014-6-11 5
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